A Study of the affect of N and B doping on the growth of CVD diamond (100):H 2 X 1 surfaces

Details A Study of the affect of N and B doping on the growth of CVD diamond (100):H 2 X 1 surfaces A Study of the affect of N and B doping on the growth of CVD diamond (100):H 2 X 1 surfaces

1997-10-06

arxiv.org/abs/cond-mat/9710054v1

Physics

Condensed Matter

6 pages, 5 figures, 1 table

Scientific paper

10.1103/PhysRevB.57.9965

We present a study of the effects of Nitrogen and Boron doping on the growth of CVD diamond in the (100) mechanism. These are the first calculations of this type and show that, in accordance with recent experimental results, the presently accepted growth mechanism, that due to Harris, is cataylsed by the presence of subsurface Boron impurities. In contrast, we find that the Harris Mechanism cannot explain growth in the presence of subsurface N and suggest an alternative mechanism.

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