A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium

Details A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium A Study of Temperature-dependent Properties of N-type delta-doped Si Band-structures in Equilibrium

2010-03-25

arxiv.org/abs/1003.4926v1

Physics

Condensed Matter

Materials Science

IEEE proceedings of the 13th International Workshop on Computational Electronics (IWCE-13)

Scientific paper

A highly phosphrous delta-doped Si device is modeled with a quantum well with periodic boundary conditions and the semi-empirical spds* tight-binding band model. Its temperature-dependent electronic properties are studied. To account for high doping density with many electrons, a highly parallelized self-consistent Schroedinger-Poisson solver is used with atomistic representations of multiple impurity ions. The band-structure in equilibrium and the corresponding Fermi-level position are computed for a selective set of temperatures. The result at room temperature is compared with previous studies and the temperature-dependent electronic properties are discussed further in detail with the calculated 3-D self-consistent potential profile.

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