A spin field effect transistor for low leakage current

Details A spin field effect transistor for low leakage current A spin field effect transistor for low leakage current

2004-07-07

arxiv.org/abs/cond-mat/0407177v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

To appear in Physica E. The revised version has additional material which addresses the issue of which way the contacts should

Scientific paper

10.1016/j.physe.2004.07.009

In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the ``off''-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin-orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current.

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