A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact

Details A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact A solution in 3 dimensions for current in a semiconductor under high level injection from a point contact

2008-03-25

arxiv.org/abs/0803.3599v1

AIP Conference Proceedings Vol. 893, 2007

Physics

Condensed Matter

Other Condensed Matter

2 pages, 1 figure, 28th International Conference on the Physics of Semiconductors, Vienna, 24-28 July 2006

Scientific paper

The standard equations for semiconductor device analysis were solved by
specifying the electron and hole current injected at a small contact, assuming
high-level injection. Calculated current-voltage characteristics were fit to
measurements of a single point breakdown in an ultrathin dielectric. It was
found that the minority carrier injection level was about 70%.

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