Physics – Condensed Matter – Materials Science
Scientific paper
2011-09-23
Microelectronics Engineering 87, 10 (2009) 1872
Physics
Condensed Matter
Materials Science
Scientific paper
10.1016/j.mee.2009.11.022
Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers.
Dubois Emmanuel
Krzeminski Christophe
Larrieu Guilhem
Lecestre Aurélie
Passi Vikram
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