A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

Details A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor A Single-Crystalline, Epitaxial SrTiO3 Thin-Film Transistor

2009-12-22

arxiv.org/abs/0912.4341v1

J. Appl. Phys. 107, 096103 (2010)

Physics

Condensed Matter

Materials Science

12 pages, 4 figures

Scientific paper

10.1063/1.3407568

We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility ~0.8 cm^2/Vs. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.

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