A simple model of Coulomb disorder and screening in graphene

Details A simple model of Coulomb disorder and screening in graphene A simple model of Coulomb disorder and screening in graphene

2007-06-29

arxiv.org/abs/0706.4425v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2.5 pages, twice longer than previous version

Scientific paper

10.1103/PhysRevB.76.233411

We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such disorder creates two-dimensional concentration $n_0 \sim N^{2/3}$ of electrons and holes in graphene. Electrons and holes reside in alternating in space puddles of the size $R_0 \sim N^{-1/3}$. A typical puddle has only one or two carriers in agreement with recent scanning single electron transistor experiment.

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