A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

Details A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

2010-10-06

arxiv.org/abs/1010.1232v2

Appl. Phys. Lett. 98, 014104 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

One file including paper (with 3 figures) and supplementary information (with 5 figures). Submitted

Scientific paper

10.1063/1.3535958

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq = 1.6x10-2 e/sqr(Hz) at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.

Affiliated with

Also associated with

No associations

Rating

A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-428471