A semiconductor exciton memory cell based on a single quantum nanostructure

Details A semiconductor exciton memory cell based on a single quantum nanostructure A semiconductor exciton memory cell based on a single quantum nanostructure

2008-05-13

arxiv.org/abs/0805.1819v1

Nano Letters 8, 1750-1755 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

23 pages

Scientific paper

10.1021/nl800911n

We demonstrate storage of excitons in a single nanostructure, a self-assembled Quantum Post. After generation electron and holes forming the exciton are separated by an electric field towards opposite ends of the Quantum Post inhibiting their radiative recombination. After a defined time such spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the Quantum Post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.

Affiliated with

Also associated with

No associations

Rating

A semiconductor exciton memory cell based on a single quantum nanostructure does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with A semiconductor exciton memory cell based on a single quantum nanostructure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A semiconductor exciton memory cell based on a single quantum nanostructure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-472318