A renormalization-group analysis of the interacting resonant level model at finite bias: Generic analytic study of static properties and quench dynamics

Details A renormalization-group analysis of the interacting resonant level model at finite bias: Generic analytic study of static properties and quench dynamics A renormalization-group analysis of the interacting resonant level model at finite bias: Generic analytic study of static properties and quench dynamics

2010-10-27

arxiv.org/abs/1010.5666v3

Phys. Rev. B 83, 205103 (2011)

Physics

Condensed Matter

Strongly Correlated Electrons

24 pages, 13 figures; revised version as published

Scientific paper

10.1103/PhysRevB.83.205103

Using a real-time renormalization group method we study the minimal model of a quantum dot dominated by charge fluctuations, the two-lead interacting resonant level model, at finite bias voltage. We develop a set of RG equations to treat the case of weak and strong charge fluctuations, together with the determination of power-law exponents up to second order in the Coulomb interaction. We derive analytic expressions for the charge susceptibility, the steady-state current and the conductance in the situation of arbitrary system parameters, in particular away from the particle-hole symmetric point and for asymmetric Coulomb interactions. In the generic asymmetric situation we find that power laws can be observed for the current only as function of the level position (gate voltage) but not as function of the voltage. Furthermore, we study the quench dynamics after a sudden switch-on of the level-lead couplings. The time evolution of the dot occupation and current is governed by exponential relaxation accompanied by voltage-dependent oscillations and characteristic algebraic decay.

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