A possible model to high TC ferromagnetism in Gallium Manganese Nitrides based on resonation properties of impurities in semiconductors

Details A possible model to high TC ferromagnetism in Gallium Manganese Nitrides based on resonation properties of impurities in semiconductors A possible model to high TC ferromagnetism in Gallium Manganese Nitrides based on resonation properties of impurities in semiconductors

2006-07-27

arxiv.org/abs/cond-mat/0607708v1

Physics

Condensed Matter

Materials Science

18 pages, 6 figures, presented in NATO advanced workshop "Electron Correlation in New Materials and Nanosystems". To be publis

Scientific paper

The high TC ferromagnetism in (Ga,Mn)N were observed and almost all results are approximately similar to the experimental results in (Ga,Mn)As except the value of TC. Though all standard experiments on magnetism clearly support the results, the value is unexpectedly high. This work present and discuss the possibility of high TC ferromagnetism, after brief review of the experimental results. The key speculation to Bosonization method in three dimensions is resembled with the problems in Anderson localization.

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