A period-doubled structure for the 90-degree partial dislocation in silicon

Details A period-doubled structure for the 90-degree partial dislocation in silicon A period-doubled structure for the 90-degree partial dislocation in silicon

1997-04-09

arxiv.org/abs/cond-mat/9704079v1

Physics

Condensed Matter

Materials Science

4 pages, two-column style with 3 postscript figures embedded. Uses REVTEX and epsf macros. Also available at http://www.phys

Scientific paper

10.1103/PhysRevLett.79.245

We suggest that the commonly-accepted core structure of the 90-degree partial dislocation in Si may not be correct, and propose instead a period-doubled structure. We present LDA, tight-binding, and classical Keating-model calculations, all of which indicate that the period-doubled structure is lower in energy. The new structure displays a broken mirror symmetry in addition to the period doubling, leading to a wide variety of possible soliton-like defects and kinks.

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