A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

Details A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors

2003-06-08

arxiv.org/abs/cond-mat/0306199v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

26 pages, 8 figures

Scientific paper

10.1109/TED.2003.821883

We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5nm and 10nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold.

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