A Novel Route for the Inclusion of Metal Dopants in Silicon

Details A Novel Route for the Inclusion of Metal Dopants in Silicon A Novel Route for the Inclusion of Metal Dopants in Silicon

2010-03-08

arxiv.org/abs/1003.1755v1

Nanotechnology 21 (2010) 035304

Physics

Condensed Matter

Materials Science

12 pages, 3 figures

Scientific paper

10.1088/0957-4484/21/2/025304

We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS) show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.

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