A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

Details A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs

2004-03-12

arxiv.org/abs/cond-mat/0403328v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in-situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control size, position, and ordering of the quantum dots. Furthermore, single dot photoluminescence investigations confirm the high optical quality of the quantum dots fabricated.

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