A multiband envelope function model for quantum transport in a tunneling diode

Details A multiband envelope function model for quantum transport in a tunneling diode A multiband envelope function model for quantum transport in a tunneling diode

2006-12-06

arxiv.org/abs/cond-mat/0612155v1

Phys. Rev. B 71, 235331 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 4 figures

Scientific paper

10.1103/PhysRevB.71.235331

We present a simple model for electron transport in semiconductor devices that exhibit tunneling between the conduction and valence bands. The model is derived within the usual Bloch-Wannier formalism by a k-expansion, and is formulated in terms of a set of coupled equations for the electron envelope functions. Its connection with other models present in literature is discussed. As an application we consider the case of a Resonant Interband Tunneling Diode, demonstrating the ability of the model to reproduce the expected behaviour of the current as a function of the applied voltage

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