A Magnetic-Field-Effect Transistor and Spin Transport

Details A Magnetic-Field-Effect Transistor and Spin Transport A Magnetic-Field-Effect Transistor and Spin Transport

2003-11-12

arxiv.org/abs/cond-mat/0311260v1

Appl. Phys. Lett. 83, No. 22 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.1630839

A magnetic-field-effect transistor is proposed that generates a spin-polarized current and exhibits a giant negative magnetoresitance. The device consists of a nonmagnetic conducting channel (wire or strip) wrapped, or sandwiched, by a grounded magnetic shell. The process underlying the operation of the device is the withdrawal of one of the spin components from the channel, and its dissipation through the grounded boundaries of the magnetic shell, resulting in a spin-polarized current in the nonmagnetic channel. The device may generate an almost fully spin-polarized current, and a giant negative magnetoresistance effect is predicted.

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