Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2003-05-30
Appl. Phys. Lett. 83, 2405 (2003)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
related papers available at http://marcuslab.harvard.edu
Scientific paper
10.1063/1.1612904
We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and minimum feature size. Films were deposited at 100-150C using several different precursors and patterned using either PMMA or photoresist. The low deposition temperature permits uniform film growth without significant outgassing or hardbaking of resist layers. A liftoff technique presented here gives sharp step edges with edge roughness as low as ~10 nm. We also measure dielectric constants (k) and breakdown fields for the high-k materials aluminum oxide (k ~ 8-9), hafnium oxide (k ~ 16-19) and zirconium oxide (k ~ 20-29), grown under similar low temperature conditions.
Becker J. S.
Biercuk Michael J.
Gordon Roy G.
Marcus Charles M.
Monsma Douwe J.
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