A heterojunction modulation-doped Mott transistor

Details A heterojunction modulation-doped Mott transistor A heterojunction modulation-doped Mott transistor

2011-09-24

arxiv.org/abs/1109.5299v1

J. Appl. Phys. 110, 084503 (2011)

Physics

Condensed Matter

Materials Science

The article has been accepted by Journal of Applied Physics. After it is published, it will be found at: http://jap.aip.org/

Scientific paper

10.1063/1.3651612

A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FET" (ModMottFET or MMFET) as a next-generation switch. It is shown that the MMFET is characterized by unique "charge gain" characteristics as well as competitive transconductance, small signal gain and current drive.

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