A Graphene Field-Effect Device

Details A Graphene Field-Effect Device A Graphene Field-Effect Device

2007-03-08

arxiv.org/abs/cond-mat/0703208v1

IEEE Electron Device Letters, Vol. 28, No. 4, April 2007

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

12 pages, 3 figures

Scientific paper

10.1109/LED.2007.891668

In this letter, a top-gated field effect device (FED) manufactured from monolayer graphene is investigated. Except for graphene deposition, a conventional top-down CMOS-compatible process flow is applied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from top-gated Graphene-FEDs. The extracted values exceed the universal mobility of silicon and silicon-on-insulator MOSFETs.

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