A Generic Model for Current Collapse in Spin Blockaded Transport

Details A Generic Model for Current Collapse in Spin Blockaded Transport A Generic Model for Current Collapse in Spin Blockaded Transport

2007-02-07

arxiv.org/abs/cond-mat/0702161v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 10 figures. to appear in Phys Rev B

Scientific paper

10.1103/PhysRevB.76.035432

A decrease in current with increasing voltage, often referred to as negative differential resistance (NDR), has been observed in many electronic devices and can usually be understood within a one-electron picture. However, NDR has recently been reported in nanoscale devices with large single-electron charging energies which require a many-electron picture in Fock space. This paper presents a generic model in this transport regime leading to a simple criterion for the conditions required to observe NDR and shows that this model describes the recent observation of multiple NDR's in Spin Blockaded transport through weakly coupled-double quantum dots quite well. This model shows clearly how a delicate interplay of orbital energy offset, delocalization and Coulomb interaction lead to the observed NDR under the right conditions, and also aids in obtaining a good match with experimentally observed features. We believe the basic model could be useful in understanding other experiments in this transport regime as well.

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