Physics – Condensed Matter
Scientific paper
1996-06-21
Physics
Condensed Matter
Revtex 11pages, Figures available upon request
Scientific paper
10.1063/1.118285
Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.
Misewich James A.
Newns Dennis M.
Pattnaik Pratap C.
Zhou Chenggang
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