A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Details A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

2005-07-06

arxiv.org/abs/cond-mat/0507137v1

Jpn. J. Appl. Phys. 44, L896 (2005)

Physics

Condensed Matter

Materials Science

9 pages, 4 figures

Scientific paper

10.1143/JJAP.44.L896

A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.

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