A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio

Details A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio

2007-11-09

arxiv.org/abs/0711.1482v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1016/j.physe.2007.10.119

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device also has excellent inverter characteristics, making it attractive for applications in low power and high density Boolean logic circuits.

Affiliated with

Also associated with

No associations

Rating

A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-702586