A current-voltage model for Schottky-barrier graphene based transistors

Details A current-voltage model for Schottky-barrier graphene based transistors A current-voltage model for Schottky-barrier graphene based transistors

2007-12-11

arxiv.org/abs/0712.1687v2

Nanotechnology 19 (2008) 345204

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 4 figures

Scientific paper

10.1088/0957-4484/19/34/345204

A low complexity computational model of the current-voltage characteristics for graphene nano-ribbon (GNR) field effect transistors (FET), able to simulate a hundred of points in few seconds using a PC, is presented. For quantum capacitance controlled devices, self-consistent calculations of the electrostatic potential can be skipped. Instead, analytical closed-form electrostatic potential from Laplace's equation yields accurate results compared with that obtained by self-consistent Non-Equilibrium Green's Functions (NEGF) method. The model includes both tunnelling current through the Schottky barrier (SB) at the contact interfaces and thermionic current above the barrier, properly capturing the effect of arbitrary physical and electrical parameters.

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