A continuous compositional-spread technique based on pulsed-laser deposition and applied to the growth of epitaxial films

Details A continuous compositional-spread technique based on pulsed-laser deposition and applied to the growth of epitaxial films A continuous compositional-spread technique based on pulsed-laser deposition and applied to the growth of epitaxial films

2001-04-09

arxiv.org/abs/cond-mat/0104157v1

Rev. Sci. Instr. 72 (2001) 2673-2678

Physics

Condensed Matter

Materials Science

6 pages, accepted for publication in Rev. Sci. Instr

Scientific paper

10.1063/1.1374597

A novel continuous-compositional spread technique based on the non-uniformity of the deposition rate typically observed in Pulsed Laser Deposition (PLD) is introduced. The approach uses the spatial variations in the deposition-rate naturally occurring in PLD; therefore, there is no need for the masks typically used in combinatorial techniques. Consequently, combinatorial materials synthesis can be carried out under optimized film growth conditions (e.g. at high temperature). Additionally, lifting the need for post-annealing renders this method applicable to heat-sensitive materials and substrates (e.g. films of transparent oxides on polymer substrates). Composition determination across the sample and mapping of physical properties onto the ternary phase diagram is achieved via a simple algorithm using the parameters that describe the deposition-rate profiles. Results are shown for the high-temperature growth of crystalline perovskites (including (Ba,Sr)TiO3 and the formation of a metastable alloy between SrRuO3 and SrSnO3) and the room-temperature growth of transparent conducting oxides.

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