640x480 MCT 3- to 5-um snapshot focal plane array

Details 640x480 MCT 3- to 5-um snapshot focal plane array 640x480 MCT 3- to 5-um snapshot focal plane array

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..577a&link_type=abstract

Proc. SPIE Vol. 3379, p. 577-585, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Optics

Scientific paper

A 640 X 480 snapshot IRCMOS array with 25 micron pitch operating in the 3 - 5 microns range was fabricated and an image demonstrated at the Infrared Laboratory (LIR). The readout circuit with 2 pC charge handling capacity was designed and processed with a 1.2 micrometer design rules standard CMOS technology. Photovoltaic (PV) detectors were achieved by ion implantation in liquid phase epitaxy MCT layers and interconnected by indium bumps on the readout circuit. A description of the component is given and the main electro-optical characteristics are presented. The pixel operability is greater than 99.8% and a NEDT of 15 mK was measured at half dynamics. Excellent imagery has been obtained with this component operating at 77 K and f/2 optics.

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