35% magnetocurrent with spin transport through Si

Details 35% magnetocurrent with spin transport through Si 35% magnetocurrent with spin transport through Si

2007-04-30

arxiv.org/abs/0704.3949v1

Appl. Phys. Lett. 91, 052501 (2007)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.2767198

Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where strong spin-scattering significantly reduces injected spin polarization) is eliminated by moving the FM in the spin injector from the tunnel junction base anode to the emitter cathode and away from the silicon surface. This results in over an order-of-magnitude increase in spin injection efficiency, from a previously-reported magnetocurrent ratio of ~2% to ~35% and an estimated spin polarization in Si from ~1% to at least ~15%. The injector tunnel-junction bias dependence of this spin transport signal is also measured, demonstrating the importance of low bias voltage to preserve high injected spin polarization.

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