29Si Hyperfine Structure of the E'_αCenter in Amorphous Silicon Dioxide

Details 29Si Hyperfine Structure of the E'_αCenter in Amorphous Silicon Dioxide 29Si Hyperfine Structure of the E'_αCenter in Amorphous Silicon Dioxide

2006-09-25

arxiv.org/abs/cond-mat/0609643v1

Physical Review Letters, Vol. 97, Issue 13, Page 135502, (2006)

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages

Scientific paper

10.1103/PhysRevLett.97.135502

We report a study by electron paramagnetic resonance (EPR) on the E'_\alpha point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E'_alpha consists in a pair of lines split by 49 mT. On the basis of the experimental results a microscopic model is proposed for the E'_alpha center, consisting in a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.

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