1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack

Details 1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack 1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack

2004-08-25

arxiv.org/abs/cond-mat/0408532v1

Phys. rev. Lett. 94, 027203, (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.94.027203

We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic semiconductors on the magnetization orientation rather than from a parallel or antiparallel alignment of the contacts. The key novel spintronics features of this effect are: (i) both normal and inverted spin-valve like signals; (ii) a large non-hysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis. (iv) Enormous amplification of the effect at low bias and temperatures.

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