100 GHz Transistors from Wafer Scale Epitaxial Graphene

Details 100 GHz Transistors from Wafer Scale Epitaxial Graphene 100 GHz Transistors from Wafer Scale Epitaxial Graphene

2010-02-19

arxiv.org/abs/1002.3845v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1126/science.327.5966.734-b

High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gate length of 240 nm. The high-frequency performance of these epitaxial graphene transistors not only shows the highest speed for any graphene devices up to date, but it also exceeds that of Si MOSFETs at the same gate length. The result confirms the high potential of graphene for advanced electronics applications, marking an important milestone for carbon electronics.

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