1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

Details 1/f Tunnel Current Noise through Si-bound Alkyl Monolayers 1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

2007-01-19

arxiv.org/abs/cond-mat/0701477v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Phys. Rev. B, in press

Scientific paper

10.1103/PhysRevB.76.205407

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with >. A model is proposed showing qualitative agreements with our experimental data.

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