1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs

Details 1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs 1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs

2005-10-06

arxiv.org/abs/cond-mat/0510142v1

AIP Conference Proceedings 780, 139-142 (2005)

Physics

Condensed Matter

Disordered Systems and Neural Networks

PDF, 4 pages, 2 figures, in: Proceedings of the 18th International Conference on Noise and Fluctuations (ICNF2005), September

Scientific paper

10.1063/1.2036717

Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations were used. The normalized noise power SR/R2 increases strongly when the hole density or the temperature are decreased. The temperature dependence is steeper at the lowest densities. This contradicts the predictions of the modulation approach in the strong localization hopping transport regime. The hypothesis of a second order phase transition or percolation transition at a density below that of the MIT is thus reinforced.

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