(001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors

Physics – Condensed Matter

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

17 pp, 4 figures (upon request), RevTex 3.0 Report CIEA-95/01 MC

Scientific paper

In a previous paper [\prb {\bf 50}, 1980 (1994)] we gave account of the nondispersive band first found experimentally at --4.4 eV for CdTe(001) by Niles and H\"ochst. We have characterized this band as a surface--induced bulk state. In a second paper we showed that a similar state does exist in II--VI and III--V zincblende semiconductor compounds. In this paper we show that there are more such states within the valence band energy interval. We use tight-binding hamiltonians and the surface Green's function matching method to calculate the surface and surface--induced bulk states in the wide band gap zincblende semiconductors CdTe, CdSe, ZnTe and ZnSe. We find a distinctive surface state for the cation and two for the anion termination of the (001)--surface and three (001)--surface--induced bulk states with energies that correspond to the value of the heavy hole, light hole and spin--orbit bands at $X$.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

(001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with (001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and (001)-Surface-induced bulk and surface states in wide band gap sincblende II-VI semiconductors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-702030

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.