Pseudo-diffusive conduction at the Dirac point of a normal-superconductor junction in graphene

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.75.045426

A ballistic strip of graphene (width W>> length L) connecting two normal metal contacts is known to have a minimum conductivity of 4e^{2}/pi h at the Dirac point of charge neutrality. We calculate what happens if one of the two contacts becomes superconducting. While the ballistic conductance away from the Dirac point is increased by Andreev reflection at the normal-superconductor (NS) interface, we find that the minimum conductivity stays the same. This is explained as a manifestation of pseudo-diffusive conduction at the Dirac point. As a generalization of our results for a ballistic system, we provide a relation between the conductance G_NS of an arbitrarily disordered normal-superconductor junction in graphene and its value G_N when both contacts are in the normal state.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Pseudo-diffusive conduction at the Dirac point of a normal-superconductor junction in graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Pseudo-diffusive conduction at the Dirac point of a normal-superconductor junction in graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Pseudo-diffusive conduction at the Dirac point of a normal-superconductor junction in graphene will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-99336

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.