Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities

Details Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities

2002-06-14

arxiv.org/abs/cond-mat/0206276v1

Physics

Condensed Matter

13 pages, 11 figures, accepted for publication in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.66.085304

We present a theoretical model that allows us to describe the polariton dynamics in a semiconductor microcavity at large densities, for the case of non-resonant excitation. Exciton-polariton scattering from a thermalized exciton reservoir is identified as the main mechanism for relaxation into the lower polariton states. A maximum in the polariton distribution that shifts towards lower energies with increasing pump-power or temperature is shown, in agreement with recent experiments. Above a critical pump-power, macroscopic occupancies (5 \times 10^4) can be achieved in the lowest energy polariton state. Our model predicts the possibility of Bose-Einstein Condensation of polaritons, driven by exciton-polariton interaction, at densities well below the saturation density for CdTe microcavities.

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