Physics – Condensed Matter – Materials Science
Scientific paper
2010-12-21
Physics
Condensed Matter
Materials Science
21 pages, 6 figures
Scientific paper
Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device (SQUID) magnetometry, Raman spectroscopy, and high resolution X-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E0 electronic transition in (Ga,Mn)As, revealed significant differences between the energy band structures in vicinity of the {\Gamma} point of the Brillouin zone for the two (Ga,Mn)As films. In view of the obtained experimental results the evolution of the valence band structure in (Ga,Mn)As with increasing Mn content is discussed, pointing to a merging the Mn-related impurity band with the host GaAs valence band for high Mn content.
Andrearczyk T.
Domagala Jarek Z.
Krzyzanowska H.
Sadowski Janusz
Wosinski T.
No associations
LandOfFree
Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-96708