Temperature dependent deviations from ideal quantization of plateau conductances in GaAs quantum point contacts

Details Temperature dependent deviations from ideal quantization of plateau conductances in GaAs quantum point contacts Temperature dependent deviations from ideal quantization of plateau conductances in GaAs quantum point contacts

2002-08-23

arxiv.org/abs/cond-mat/0208452v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 6 figures; to appear in proceedings of ICPS 2002, Edinburgh

Scientific paper

We present detailed experimental studies of the temperature dependence of the plateau conductance of GaAs quantum point contacts in the temperature range from 0.3 K to 10 K. Due to a strong lateral confinement produced by a shallow-etching technique we are able to observe the following unexpected feature: a linear temperature dependence of the measured mid-plateau conductance. We discuss an interpretation in terms of a temperature dependent, intrinsic series resistance, due to non-ballistic effects in the 2D-1D transition region. These results have been reproduced in several samples from different GaAs/GaAlAs heterostructures and observed in different experimental set-ups.

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