Density dependence of spin relaxation in GaAs quantum well at room temperature

Details Density dependence of spin relaxation in GaAs quantum well at room temperature Density dependence of spin relaxation in GaAs quantum well at room temperature

2008-06-16

arxiv.org/abs/0806.2577v2

Europhys. Lett. 84, 27006 (2008).

Physics

Condensed Matter

Materials Science

4 pages, 2 figures, Europhys. Lett., in press

Scientific paper

10.1209/0295-5075/84/27006

Carrier density dependence of electron spin relaxation in an intrinsic GaAs quantum well is investigated at room temperature using time-resolved circularly polarized pump-probe spectroscopy. It is revealed that the spin relaxation time first increases with density in the relatively low density regime where the linear D'yakonov-Perel' spin-orbit coupling terms are dominant, and then tends to decrease when the density is large and the cubic D'yakonov-Perel' spin-orbit coupling terms become important. These features are in good agreement with theoritical predictions by L\"u {\em et al.} [Phys. Rev. B {\bf 73}, 125314 (2006)]. A fully microscopic calculation based on numerically solving the kinetic spin Bloch equations with both the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms included, reproduces the density dependence of spin relaxation very well.

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