Critical exponents at the superconductor-insulator transition in dirty-boson systems

Details Critical exponents at the superconductor-insulator transition in dirty-boson systems Critical exponents at the superconductor-insulator transition in dirty-boson systems

2000-01-05

arxiv.org/abs/cond-mat/0001040v2

Physical Review B, vol. 61, p. 14723 (2000)

Physics

Condensed Matter

Superconductivity

4 pages, RevTex, eq. 10 corrected

Scientific paper

10.1103/PhysRevB.61.14723

I obtain the inverse of the correlation length exponent at the superfluid-Bose glass quantum critical point as a series in small parameter $\sqrt{d-1}$, with d being the dimensionality of the system, and compute the first two terms using a novel field-theoretic technique. For d=2 I find $\nu_s = 0.81$ and $\nu_c = 1.03$, for short-range and Coulomb interactions between bosons, respectively. When combined with the exact values of the dynamical critical exponents $z_s = d$ and $z_c = 1$, these results are in quantitative agreement with the experiments on onset of superfluidity in $^4 He$ in porous glasses, and on superconductor-insulator transition in homogeneous metallic films, in support of the dirty-boson theory fot the latter. Higher-order calculation of the exponents and of the universal conductivity is discussed.

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