Single-hole transistor in p-type GaAs/AlGaAs heterostructures

Details Single-hole transistor in p-type GaAs/AlGaAs heterostructures Single-hole transistor in p-type GaAs/AlGaAs heterostructures

2005-10-21

arxiv.org/abs/cond-mat/0510562v2

Appl. Phys. Lett. 87, 232108 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 5 figures

Scientific paper

10.1063/1.2139994

A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed.

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