Field emission properties of nano-composite carbon nitride films

Details Field emission properties of nano-composite carbon nitride films Field emission properties of nano-composite carbon nitride films

1999-09-08

arxiv.org/abs/cond-mat/9909125v1

Physics

Condensed Matter

Materials Science

22 pages, 8 figures, submitted to J. Vac. Sc. Techn. B

Scientific paper

10.1116/1.1322043

A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/micron. When the films were etched in an HF:NH4F solution for ten minutes, the threshold field decreased to 2.6 V/micron. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed.

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