Crossed Andreev reflection-induced magnetoresistance

Details Crossed Andreev reflection-induced magnetoresistance Crossed Andreev reflection-induced magnetoresistance

2005-12-05

arxiv.org/abs/cond-mat/0512090v2

Phys. Rev. Lett. 97, 087001 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, final published version

Scientific paper

10.1103/PhysRevLett.97.087001

We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.

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