Electronic structure of epitaxial graphene nanoribbons on SiC(0001)

Details Electronic structure of epitaxial graphene nanoribbons on SiC(0001) Electronic structure of epitaxial graphene nanoribbons on SiC(0001)

2009-08-18

arxiv.org/abs/0908.2554v1

Appl. Phys. Lett. 95, 063111 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 4 figures

Scientific paper

10.1063/1.3202397

We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended H\"{u}ckel Theory and real/momentum space projections we argue that the role of the heterostructure's interface becomes crucial for the conducting capacity of the studied systems. The key issue arising from this interaction is a Fermi level pinning effect introduced by dangling interface bonds. Such phenomenon is independent from the width of the considered nanostructures, compromising the importance of confinement in these systems.

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