Measuring carrier density in parallel conduction layers of quantum Hall systems

Details Measuring carrier density in parallel conduction layers of quantum Hall systems Measuring carrier density in parallel conduction layers of quantum Hall systems

2004-11-19

arxiv.org/abs/cond-mat/0411520v1

J. Appl. Phys. 98, 013709 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 7 figures

Scientific paper

10.1063/1.1948529

An experimental analysis for two parallel conducting layers determines the full resistivity tensor of the parallel layer, at magnetic fields where the other layer is in the quantum Hall regime. In heterostructures which exhibit parallel conduction in the modulation-doped layer, this analysis quantitatively determines the charge density in the doping layer and can be used to estimate the mobility. To illustrate one application, experimental data show magnetic freeze-out of parallel conduction in a modulation doped heterojunction. As another example, the carrier density of a minimally populated second subband in a two-subband quantum well is determined. A simple formula is derived that can estimate the carrier density in a highly resistive parallel layer from a single Hall measurement of the total system.

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