Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0

Details Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0 Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0

1998-07-16

arxiv.org/abs/cond-mat/9807235v2

Physics

Condensed Matter

4 pages, 4 Postscript figures

Scientific paper

10.1103/PhysRevLett.82.1744

We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9 cm^{-2}

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