Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications

Details Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications

2011-03-08

arxiv.org/abs/1103.1599v4

IEEE Transactions on Electron Devices, vol. 58, issue 11, pp. 4049-4052 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

10.1109/TED.2011.2163517

We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not needed. The physical framework is a field-effect model and drift-diffusion carrier transport. Explicit closed-form expressions have been derived for the drain current covering continuosly all operation regions. The model has been benchmarked with measured prototype devices, demonstrating accuracy and predictive behavior. Finally, we show an example of projection of the intrinsic gain as a figure of merit commonly used in RF /analog applications.

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