Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors

Details Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors

2007-02-09

arxiv.org/abs/cond-mat/0702239v1

Physics

Condensed Matter

Materials Science

10 pages, 4 figures, submitted to APL

Scientific paper

We have investigated the spin-dependent transport properties of GaMnAs-based three-terminal semiconductor spin hot-carrier transistor (SSHCT) structures. The emitter-base bias voltage VEB dependence of the collector current IC, emitter current IE, and base current IB shows that the current transfer ratio alpha (= IC / IE) and the current gain beta (= IC / IB) are 0.8-0.95 and 1-10, respectively, which means that GaMnAs-based SSHCTs have current amplifiability. In addition, we observed an oscillatory behavior of the tunneling magnetoresistance (TMR) ratio with the increasing bias, which can be explained by the resonant tunneling effect in the GaMnAs quantum well.

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