Spin injection in spin FETs using a step-doping profile

Details Spin injection in spin FETs using a step-doping profile Spin injection in spin FETs using a step-doping profile

2004-05-25

arxiv.org/abs/cond-mat/0405591v2

IEEE Trans. Nanotechnology 4, 40-44 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 8 figures. This paper is based on the work presented at the 2004 IEEE NTC Quantum Device Technology Workshop (Clarkso

Scientific paper

10.1109/TNANO.2004.840150

We investigate effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well (QW) in spin FETs using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal/semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.

Affiliated with

Also associated with

No associations

Rating

Spin injection in spin FETs using a step-doping profile does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Spin injection in spin FETs using a step-doping profile, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Spin injection in spin FETs using a step-doping profile will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-78552