Simulation of Graphene Nanoribbon Field Effect Transistors

Details Simulation of Graphene Nanoribbon Field Effect Transistors Simulation of Graphene Nanoribbon Field Effect Transistors

2007-04-14

arxiv.org/abs/0704.1875v2

IEEE Electron Device Letters, Vol. 28, Issue 8, pp. 760 - 762, 2007

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1109/LED.2007.901680

We present an atomistic three-dimensional simulation of graphene nanoribbon field effect transistors (GNR-FETs), based on the self-consistent solution of the 3D Poisson and Schroedinger equation with open boundary conditions within the non-equilibrium Green's Function formalism and a tight-binding hamiltonian. With respect to carbon nanotube FETs, GNR-FETs exhibit comparable performance, reduced sensitivity on the variability of channel chirality, and similar leakage problems due to band-to-band tunneling. Acceptable transistor performance requires effective nanoribbon width of 1-2 nm, that could be obtained with periodic etching patterns or stress patterns.

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